1 - 2 ? 2000 ixys all rights reserved g = gate, c = collector, e = emitter, tab = collector symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c60a i c90 t c = 90 c31a i cm t c = 25 c, 1 ms 80 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 i cm = 62 a (rbsoa) clamped inductive load, l = 100 h @ 0.8 v ces p c t c = 25 c 150 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque (m3) to-247 1.13/10 nm/lb.in. maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s weight to-247 6 g to-268 4 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 600 v v ge(th) i c = 250 a, v ce = v ge 2.5 5.5 v i ces v ce = 0.8 ? v ces t j = 25 c 200 a v ge = 0 v t j = 125 c3ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 1.7 v ultra-low v ce(sat) v ces = 600 v igbt with diode i c25 = 60 a v ce(sat) = 1.7 v features igbt and anti-parallel fred in one package low v ce(sat) - for minimum on-state conduction losses mos gate turn-on - drive simplicity fast recovery epitaxial diode (fred) - soft recovery with low i rm applications ac motor speed control dc servo and robot drives dc choppers uninterruptible power supplies (ups) switch-mode and resonant-mode power supplies advantages space savings (two devices in one package) easy to mount with 1 screw (isolated mounting screw hole) reduces assembly time and cost high power density 98559a (7/00) ixgh 31n60d1 ixgt 31n60d1 preliminary data c (tab) g c e to-247 ad (ixgh) to-268 (ixgt) g e c (tab) ixys reserves the right to change limits, test conditions, and dimensions.
2 - 2 ? 2000 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 10 16 s pulse test, t 300 s, duty cycle 2 % c ies 1500 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 130 pf c res 40 pf q g 80 100 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 15 30 nc q gc 30 40 nc t d(on) 15 ns t ri 25 ns t d(off) 400 800 ns t fi 400 800 ns e off 6mj t d(on) 15 ns t ri 25 ns e on 1mj t d(off) 800 ns t fi 800 ns e off 12 mj r thjc 0.83 k/w r thck 0.25 k/w reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = i c90 , v ge = 0 v, t j = 150 c 1.6 v pulse test, t 300 s, duty cycle d 2 % t j = 25 c 2.5 v i rm i f = i c90 , v ge = 0 v, -di f /dt = 100 a/ s6a t rr v r = 100 v t j =100 c 100 ns i f = 1 a; -di/dt = 100 a/ s; v r = 30 v t j = 25 c25 ns r thjc 1k/w inductive load, t j = 25 c i c = i c90 , v ge = 15 v, l = 100 h, v ce = 0.8 v ces , r g = r off = 10 remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g inductive load, t j = 125 c i c = i c90 , v ge = 15 v, l = 100 h v ce = 0.8 v ces , r g = r off = 10 remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g ixgh 31n60d1 ixgt 31n60d1 to-247 ad (ixgh) outline dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 to-268aa (d 3 pak) dim. millimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .114 a 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 c .4 .65 .016 .026 d 13.80 14.00 .543 .551 e 15.85 16.05 .624 .632 e 1 13.3 13.6 .524 .535 e 5.45 bsc .215 bsc h 18.70 19.10 .736 .752 l 2.40 2.70 .094 .106 l1 1.20 1.40 .047 .055 l2 1.00 1.15 .039 .045 l3 0.25 bsc .010 bsc l4 3.80 4.10 .150 .161 min. recommended footprint ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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